JPH0614478Y2 - 薄膜形成装置 - Google Patents

薄膜形成装置

Info

Publication number
JPH0614478Y2
JPH0614478Y2 JP12197988U JP12197988U JPH0614478Y2 JP H0614478 Y2 JPH0614478 Y2 JP H0614478Y2 JP 12197988 U JP12197988 U JP 12197988U JP 12197988 U JP12197988 U JP 12197988U JP H0614478 Y2 JPH0614478 Y2 JP H0614478Y2
Authority
JP
Japan
Prior art keywords
cathode
thin film
side magnet
electrode
film forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP12197988U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0242427U (en]
Inventor
健二 内橋
治寿 橋本
秀則 西脇
三千年 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP12197988U priority Critical patent/JPH0614478Y2/ja
Publication of JPH0242427U publication Critical patent/JPH0242427U/ja
Application granted granted Critical
Publication of JPH0614478Y2 publication Critical patent/JPH0614478Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP12197988U 1988-09-16 1988-09-16 薄膜形成装置 Expired - Lifetime JPH0614478Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12197988U JPH0614478Y2 (ja) 1988-09-16 1988-09-16 薄膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12197988U JPH0614478Y2 (ja) 1988-09-16 1988-09-16 薄膜形成装置

Publications (2)

Publication Number Publication Date
JPH0242427U JPH0242427U (en]) 1990-03-23
JPH0614478Y2 true JPH0614478Y2 (ja) 1994-04-13

Family

ID=31369485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12197988U Expired - Lifetime JPH0614478Y2 (ja) 1988-09-16 1988-09-16 薄膜形成装置

Country Status (1)

Country Link
JP (1) JPH0614478Y2 (en])

Also Published As

Publication number Publication date
JPH0242427U (en]) 1990-03-23

Similar Documents

Publication Publication Date Title
US6076483A (en) Plasma processing apparatus using a partition panel
US6167835B1 (en) Two chamber plasma processing apparatus
JPS60135573A (ja) スパツタリング方法及びその装置
JPH0353065A (ja) スパッタ装置
JPH0669026B2 (ja) 半導体処理装置
JPS62103372A (ja) プラズマを使用した化学蒸気堆積による薄膜形成方法および装置
JPH0614478Y2 (ja) 薄膜形成装置
JP2001351795A (ja) 長尺成膜基体の静電気除去方法及び装置
JP2796765B2 (ja) 薄膜形成装置
JPS6112866A (ja) プラズマ集中型高速スパツタ装置
JP2732281B2 (ja) 薄膜形成方法
JP2823611B2 (ja) プラズマｃｖｄ装置
JP2765788B2 (ja) プラズマｃｖｄ装置
JPH0758083A (ja) 半導体製造装置
JPS60246546A (ja) イオンビ−ム装置用グリツド
JP4312331B2 (ja) 電子放出装置
JPS60258927A (ja) バイアススパツタ装置
JPH02156526A (ja) マイクロ波プラズマ処理装置
JPS5848421A (ja) ドライエツチング装置
JP3095565B2 (ja) プラズマ化学蒸着装置
JP2000064052A (ja) プラズマｃｖｄ装置
JPS6389663A (ja) スパツタリング装置
JPS619577A (ja) プラズマ化学気相成長法
JPH01185915A (ja) 薄膜形成方法
JP2732294B2 (ja) 薄膜形成方法